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Thermodynamics of the Si‐O‐N System: I, High‐Temperature Study of the Vaporization Behavior of Silicon Nitride by Mass Spectrometry
Author(s) -
Rocabois Philippe,
Chatillon Christian,
Bernard Claude
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08596.x
Subject(s) - vaporization , mass spectrometry , silicon nitride , evaporation , body orifice , silicon , analytical chemistry (journal) , chemistry , knudsen number , materials science , thermodynamics , chromatography , ecology , physics , organic chemistry , biology
Si 3 N 4 (s) powders are vaporized in effusion cells, and the gaseous phase, analyzed by mass spectrometry, is composed of N 2 , Si, Si 2 , Si 3 , SiN, and Si 2 N. Owing to retarding vaporization of N 2 , effusion cells with different orifice sizes are used in order to determine the evaporation coefficient for this species, which is then compared with previous Knudsen or Langmuir studies. Enthalpies of formation for SiN(g) and Si 2 N(g) are determined.