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Suppressing the Formation of Cone Structures in Chemical‐Vapor‐Deposited Aluminum Nitride/Titanium Nitride Films
Author(s) -
Liu Yi Jun,
Kim Hee Joon,
Takeuchi Takashi,
Egashira Yasuyuki,
Kimura Hisamichi M.,
Komiyama Hiroshi
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08556.x
Subject(s) - tin , titanium nitride , nitride , chemical vapor deposition , materials science , deposition (geology) , substrate (aquarium) , aluminium , titanium , composite number , chemical engineering , nanotechnology , composite material , layer (electronics) , metallurgy , paleontology , oceanography , sediment , geology , engineering , biology
Cone structures are sometimes observed in aluminum nitride/titanium nitride (AIN/TiN) composite films formed by chemical vapor deposition (CVD). In this study, we determined the formation mechanism of cone structures by looking at such films deposited on Si substrates. We found that the mechanism can be explained by changes in the deposition rate due to composition differences in the growing surfaces, rather than by inhomogeneities in the original substrate surface. We then used this discovery to develop a technique to suppress cone structure formation, i. e., deposition of an interlayer before the deposition of the composite. To validate our technique, we then successfully suppressed the formation of cone structures in AIN/TiN films by depositing a TiN interlayer on the substrate before the deposition of AIN/TiN.