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High‐Temperature Corrosion Resistance of Chemically Vapor Deposited Silicon Carbide against Hydrogen Chloride and Hydrogen Gaseous Environments
Author(s) -
Kim DongJoo,
Choi DooJin
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08153.x
Subject(s) - corrosion , materials science , hydrogen , chemical vapor deposition , silicon carbide , crystallite , hydrogen chloride , chloride , silicon , carbide , chemical engineering , anaerobic corrosion , inorganic chemistry , metallurgy , chemistry , nanotechnology , organic chemistry , engineering
Silicon carbide (SiC) films deposited by chemical vapor deposition were exposed to hydrogen chloride and hydrogen gaseous mixture (5% HCl and 95% H 2 ) at 1200°C with a total pressure of 101 kPa in order to investigate their durability against the corrosive gas. Corrosion resistance against the HCl and H 2 gaseous mixture was related to the micro‐structure and preferred orientation of the SiC films, which depend on the deposition conditions. The stratified structure with a small crystallite had higher corrosion resistance than the faceted columnar structure, and (111) oriented films had higher resistance than (220) oriented films.