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Mechanism of Nitridation of Silicon Powder in a Fluidized‐Bed Reactor
Author(s) -
Koike Junichi,
Kimura Shoichi
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08130.x
Subject(s) - spallation , materials science , silicon nitride , fluidized bed , transmission electron microscopy , silicon , composite material , nitride , chemical engineering , mineralogy , metallurgy , nanotechnology , layer (electronics) , chemistry , nuclear physics , neutron , physics , organic chemistry , engineering
Direct nitridation of 400 μm average‐sized silicon granules, composed of 2 μm average‐sized particles, was carried out in a fluidized‐bed reactor. Nitridation progress was studied by transmission electron microscopy (TEM). TEM photomicrographs suggested that the formation of surface nitride layers on individual silicon particles and the subsequent spallation of these layers were the dominant process of the direct nitridation of silicon. The spallation was modeled based on a simple crack theory, and the critical thickness of nitride layers leading to spallation was estimated to be 57 nm. This agreed reasonably well with the experimentally observed values of 20–100 nm.