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Effect of Boron Nitride on the Phase Stability and Phase Transformations in Silicon Carbide
Author(s) -
Turan Servet,
Knowles Kevin M.
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08114.x
Subject(s) - transmission electron microscopy , boron nitride , materials science , silicon carbide , boron carbide , dissociation (chemistry) , nitride , high resolution transmission electron microscopy , phase (matter) , boron , silicon nitride , carbide , electron microscope , composite material , crystallography , chemical engineering , nanotechnology , silicon , chemistry , metallurgy , optics , organic chemistry , layer (electronics) , engineering , physics
High‐resolution transmission electron microscopy has been used to study the effect of hexagonal boron nitride ( h ‐BN) on the stability of SiC polytypes in Si 3 N 4 ‐particulatereinforced SiC composites in which h ‐BN particles appeared as a trace contaminant. In contrast to previous transmission electron microscopy work on SiC‐BN composites, our results imply that there is no clear preference for a particular SiC polytype to be stabilized by h ‐BN nearby. Instead, we propose that previous observations suggesting that the 3C SiC polytype is stabilized by h ‐BN can be simply explained in terms of it being stabilized indirectly by nitrogen arising from BN dissociation during processing.