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Stress Dependence of the Raman Spectrum of β‐Silicon Nitride
Author(s) -
Sergo Valter,
Pezzotti Giuseppe,
Katagiri Gen,
Muraki Naoki,
Nishida Toshihiko
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb07944.x
Subject(s) - raman spectroscopy , silicon nitride , stress (linguistics) , nitride , materials science , silicon , phase (matter) , range (aeronautics) , analytical chemistry (journal) , composite material , chemistry , metallurgy , optics , physics , linguistics , philosophy , organic chemistry , layer (electronics) , chromatography
The stress dependence of the Raman bands of β‐silicon nitride,β‐Si 3 N 4 , has been investigated. In the stress range examined (from‐200 to +200 MPa), low‐frequency shift bands (namely the 183, 205, and 226 cm −1 lines) do not show any frequency change with the stress, whereas the high‐frequency shift bands (862, 925, and 936 cm −1 ) have been found to have a linear stress dependence. The pertinent piezo‐spectroscopic coefficients have been determined and are found to depend strongly on the additives used to promote densification presumably being taken into solid solution into the β‐Si 3 N 4 phase.