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Pb‐Diffusion Barrier Layers for PbTiO 3 Thin Films Deposited on Si Substrates by Metal Organic Chemical Vapor Deposition
Author(s) -
Hwang Cheol Seong,
Kim Hyeong Joon
Publication year - 1995
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1995.tb08805.x
Subject(s) - thin film , diffusion barrier , materials science , chemical vapor deposition , amorphous solid , tin , silicate , mineralogy , crystallite , analytical chemistry (journal) , annealing (glass) , layer (electronics) , inorganic chemistry , chemical engineering , chemistry , nanotechnology , crystallography , composite material , metallurgy , chromatography , engineering
The interfaces between metal organic chemical vapor deposited PbTiO 3 thin films and various diffusion barrier layers deposited on Si substrates were investigated by transmission electron microscopy. Several diffusion barrier thin films such as polycrystalline TiO 2 , amorphous TiO 2 , ZrO 2 , and TiN were deposited between the PbTiO 3 thin film and Si substrate, because the deposition of PbTiO 3 thin films on bare Si substrates produced Pb silicate layers at the interface irrespective of the deposition conditions. The TiO 2 films were converted to PbTiO 3 by their reaction with diffused Pb and O ions during PbTiO 3 deposition at a gubstrate temperature of 410°C. Further diffusion of Pb and O induces formation of a Pb silicate layer at the interface. ZrO 2 did not seem to react with Pb and O during PbTiO 3 deposition at the same temperature, but the Pb and O ions that diffused through the ZrO 2 layer formed a Pb silicate layer between the ZrO 2 and Si substrate. The TiN films did not seem to react with Pb and O ions during the deposition of PbTiO 3 at 410°C, but reacted with PbTiO 3 to form a lead‐deficient pyrochlore during postdeposition rapid thermal annealing at 700°C. However, TiN could effectively block the diffusion of Pb and O ions into the Si substrate and the formation of Pb silicate at the interface.