Premium
Kinetics Model for the Growth of Silicon Carbide by the Reaction of Liquid Silicon with Carbon
Author(s) -
Zhou Hong,
Singh Raj N.
Publication year - 1995
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1995.tb08685.x
Subject(s) - silicon carbide , silicon , materials science , carbon fibers , diffusion , kinetics , chemical kinetics , growth rate , layer (electronics) , reaction rate , carbide , chemical engineering , analytical chemistry (journal) , chemistry , composite material , metallurgy , thermodynamics , catalysis , organic chemistry , composite number , physics , geometry , mathematics , quantum mechanics , engineering
The kinetics and mechanism of reaction of glassy carbon with a pure silicon melt or a Si + Mo melt were investigated. The results showed that the growth of a continuous reaction‐formed SiC layer followed a fourth‐power rate law in the temperature range of 1430° to 1510°C. A model that could explain the fourth‐power rate law was developed. In this model, an internal electric field was assumed to be set up over the reaction‐formed SiC layer through a negative space charge, and then the diffusion of the carbon‐ion vacancies across this layer, driven predominately by this electric field, was considered as the rate‐limiting step for the SiC growth. Neither an increase in the processing temperature nor an addition of 10 wt% Mo into the silicon melt had a significant influence on the reaction kinetics. X‐ray diffraction analysis revealed that the reaction products were β‐SiC, and β‐SiC + MoSi 2 for the Si‐C and Si‐C‐Mo reactions, respectively.