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Chemical Interaction between Silicon Nitride and Titanium Carbide Powder
Author(s) -
Yeh ChihHung,
Hon MinHsiung
Publication year - 1995
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1995.tb08675.x
Subject(s) - titanium carbide , materials science , titanium , nitrogen , tin , silicon carbide , chemical reaction , chemical stability , nitride , carbide , titanium nitride , silicon nitride , carbon fibers , diffusion , analytical chemistry (journal) , chemical engineering , silicon , layer (electronics) , metallurgy , chemistry , composite material , thermodynamics , composite number , organic chemistry , physics , engineering
Chemical interaction within the system Si 3 N 4 ‐TiC was investigated in the present study by using thermodynamic calculations and kinetic analyses. The thermodynamic stabilities of such Si 3 N 4 ‐TiC composites as Si 3 N 4 ‐TiN‐C and Si 3 N 4 ‐Ti(C,N)‐C, and SiC‐Ti(C,N) stability regions were defined and related to temperature and nitrogen partial pressures. Kinetic analyses were performed by constructing a relative weight‐loss analysis of various Si 3 N 4 :TiC molar ratios reacted at temperatures from 1300° to 1750°C in an argon atmosphere. The reaction rates increased with the decreases in the Si 3 N 4 :TiC ratio and with increases in temperature. The reaction products consisted mainly of SiC and Ti(C,N) phases. The overall chemical interaction observed in the present study is attributable to chemical reactions between Si 3 N 4 and TiC and to the diffusion of carbon and nitrogen through the reaction layer after a dense reaction product layer had covered the titanium carbide.