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Fugitive Diffusion Barrier for Integration of Sol‐Gel‐Derived Lead Titanate with Oxidized Silicon Substrates
Author(s) -
Wright John S.,
Schwartz Joseph M.,
Schmidt Lanny D.,
Francis Lorraine Falter
Publication year - 1995
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1995.tb08669.x
Subject(s) - materials science , diffusion barrier , chemical engineering , perovskite (structure) , lead titanate , barrier layer , sol gel , layer (electronics) , amorphous solid , silicon , carbon fibers , diffusion , x ray photoelectron spectroscopy , overlayer , phase (matter) , nanotechnology , composite material , crystallography , ferroelectricity , metallurgy , chemistry , thermodynamics , physics , optoelectronics , organic chemistry , composite number , dielectric , engineering
The crystalline phase development and microstructural changes with heating of sol‐gel‐derived lead titanate (PT) particles and films on silica with and without a fugitive (or removable) diffusion barrier layer were investigated. Amorphous gel‐derived PT particles were deposited on SiO 2 ‐coated TEM grids with and without polyimide (PI) or carbon barrier layers between SiO 2 and PT. TEM analysis showed that PI or carbon barriers prevented reaction between the gel‐derived PT particles and SiO 2 . PT particles crystallize and then the PI or carbon film decomposes. Sol‐gel‐derived PT films were deposited on oxidized Si substrates (Si/SiO 2 ) with and without a PI barrier layer. Perovskite PT films were prepared on Si/SiO 2 substrates with a PI barrier; however, some porosity remained in the films. Identically prepared films without the PI barrier formed a mixture of pyrochlore and perovskite. X‐ray photoelectron spectroscopy results indicate that the PI film pre‐ vents the diffusion of Si into the PT film.