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Formation of Silicon Nitride Film by Plasma Decomposition of Methylsilazane
Author(s) -
Moriwaki Takayuki,
Matsumoto Osamu
Publication year - 1995
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1995.tb08509.x
Subject(s) - wafer , x ray photoelectron spectroscopy , silicon nitride , materials science , analytical chemistry (journal) , stoichiometry , substrate (aquarium) , thin film , silicon , impurity , decomposition , plasma , nitrogen , nitride , hydrogen , deposition (geology) , chemical engineering , chemistry , nanotechnology , metallurgy , layer (electronics) , paleontology , oceanography , physics , organic chemistry , quantum mechanics , sediment , geology , engineering , biology , chromatography
Si 3 N 4 thin films were deposited on silicon wafer or α‐Al 2 O 3 wafer substrates from methylsilazane in a microwave nitrogen‐hydrogen‐mixture plasma at substrate temperatures of 590 to 1000 K. The deposits were identified by IR spectroscopy and XPS as approximately stoichiometric Si 3 N 4 , and they contained small amounts of impurities. Decomposition of the methylsilazane in the plasma may be one of the reasons for the lower deposition temperature of the Si 3 N 4 .