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Preparation and Elastic Properties of rf‐Sputtered Amorphous Films in the System SiO 2 ‐Y 2 O 3
Author(s) -
Hanada Teiichi,
Shinoda Takuya,
Tanabe Setsuhisa,
Soga Naohiro
Publication year - 1995
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1995.tb08499.x
Subject(s) - amorphous solid , elastic modulus , materials science , sputtering , volume (thermodynamics) , oxygen , analytical chemistry (journal) , thin film , mineralogy , crystallography , composite material , chemistry , thermodynamics , nanotechnology , physics , organic chemistry
Amorphous films in the SiO 2 ‐Y 2 O 3 system were prepared by the rf‐sputtering method. Transparent amorphous films were obtained in the region between 0 and 66 mol% Y 2 O 3 content, only in an oxygen atmosphere. The densities and elastic constants of the films were determined. As the amount of Y 2 O 3 addition increased, density and elastic constants increased up to about 45 mol% Y 2 O 3 , beyond which it held constant. From the relationship between the bulk modulus and the mean atomic volume, a structural change in the present films seems to occur at about 45 mol% Y 2 O 3 content.