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Influence of Alumina Reaction Tube Impurities on the Oxidation of Chemically‐Vapor‐Deposited Silicon Carbide
Author(s) -
Opila Elizabeth
Publication year - 1995
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1995.tb08449.x
Subject(s) - kinetics , materials science , silicon carbide , impurity , tube furnace , chemical engineering , quartz , chemical vapor deposition , oxygen , chemical kinetics , analytical chemistry (journal) , chemistry , metallurgy , nanotechnology , organic chemistry , physics , quantum mechanics , engineering
Pure coupons of chemically vapor deposited (CVD) SiC were oxidized for 100 h in dry flowing oxygen at 1300°C. The oxidation kinetics were monitored using thermogra‐vimetry (TGA). The experiments were first performed using high‐purity alumina reaction tubes. The experiments were then repeated using fused quartz reaction tubes. Differences in oxidation kinetics, scale composition, and scale morphology were observed. These differences were attributed to impurities in the alumina tubes. Investigators interested in high‐temperature oxidation of silica formers should be aware that high‐purity alumina can have significant effects on experimental results.