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Standard Gibbs Energy of Formation of β‐Silicon Nitride
Author(s) -
Pánek Zdenĕk
Publication year - 1995
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1995.tb08443.x
Subject(s) - gibbs free energy , thermodynamics , silicon nitride , nitride , silicon , standard enthalpy of formation , chemistry , materials science , analytical chemistry (journal) , metallurgy , physics , nanotechnology , layer (electronics) , chromatography
Experimental thermochemical data (temperature, pressure) corresponding to the equilibrium conditions between finegrained β‐SiC and β‐Si 3 N 4 for carbon activity a (C) = 1 are presented. Based on these data, the temperature dependence of ΔG° f (β‐Si 3 N 4 ) has been expressed for standard states Si( s ), C( s ), and p(N 2 ) = 0.1 MPa by the equation ΔA° f (β‐Si 3 N 4 ) = (‐995.9 + 0.4547 T/K) kJ mol for T/K ε〈1650; 1968〉.