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Characterization of Silicon Carbide–Silicon Nitride Composite Ultrafine Particles Synthesized Using a CO 2 Laser by Silicon‐29 Magic Angle Spinning NMR and ESR
Author(s) -
Suzuki Masaaki,
Hasegawa Yoshihisa,
Aizawa Masayuki,
Nakata Yoshinori,
Okutani Takeshi,
Uosaki Kohei
Publication year - 1995
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1995.tb08364.x
Subject(s) - materials science , magic angle spinning , silicon , silicon nitride , silicon carbide , carbide , grain boundary , amorphous solid , nitride , composite number , analytical chemistry (journal) , electron paramagnetic resonance , crystallography , nuclear magnetic resonance , microstructure , nanotechnology , layer (electronics) , metallurgy , composite material , nuclear magnetic resonance spectroscopy , chemistry , physics , chromatography
The structure of silicon carbide–silicon nitride (SiC–Si 3 N 4 ) composite particles synthesized using a CO 2 laser was studied by magic angle spinning nuclear magnetic resonance (MAS‐NMR) and electron spin resonance (ESR). The structure around Si atoms changed by introducing N. C atoms around Si were substituted by N atoms, and N‐rich configurations around Si atoms increased stepwise as the N content increased. The low N content composite particles consisted of mainly SiC phase containing dissolved N. N atoms were partly present in β‐SiC microcrystal and partly in the grain boundary layer in the particle. N atoms were tetrahedrally surrounded by four Si atoms in β‐SiC microcrystal and were trivalent state bonded to three Si atoms in the grain boundary layer. The high N content particles consisted of SiC, Si 3 N 4 , and amorphous phases, whose amount depended on N content.