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Formation of Boron Nitride Inclusions in Hot Isostatically PressedSilicon Nitride‐Silicon Carbide Composites
Author(s) -
Turan Servet,
Knowles Kevin M.
Publication year - 1995
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1995.tb08232.x
Subject(s) - materials science , boron nitride , silicon carbide , carbide , nitride , silicon nitride , hot isostatic pressing , hot pressing , tantalum carbide , boron carbide , tantalum , metallurgy , composite material , graphite , silicon , oxide , layer (electronics) , microstructure
Small graphite‐like boron nitride inclusions have been detected, using transmission electron microscopy, in silicon nitride particulate‐reinforced silicon carbide composites hot isostatically pressed in tantalum cans. The inclusions are thought to arise indirectly from fine particles of boron nitride sprayed onto the internal surface of the tantalum can to prevent a chemical reaction between the tantalum and the silicon carbide. Boron oxide present on the surface of these particles is able to evaporate and penetrate the powder compacts during hot isostatic pressing and then react with silicon nitride and silicon carbide to form the observed inclusions.