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Active‐to‐Passive Transition and Bubble Formation for High‐Temperature Oxidation of Chemically Vapor‐Deposited Silicon Carbide in CO–CO 2 Atmosphere
Author(s) -
Narushima Takayuki,
Goto Takashi,
Yokoyama Yoshio,
Takeuchi Masahito,
Iguchi Yasutaka,
Hirai Toshio
Publication year - 1994
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1994.tb07273.x
Subject(s) - thermogravimetric analysis , atmosphere (unit) , silicon carbide , analytical chemistry (journal) , partial pressure , chemical vapor deposition , materials science , water vapor , carbide , silicon , chemistry , thermodynamics , metallurgy , nanotechnology , oxygen , organic chemistry , physics
Oxidation behavior of chemically vapor‐deposited SiC in CO─CO 2 atmospheres (0.1 MPa) was investigated using a thermogravimetric technique at temperatures from 1823 to 1923 K. Active or passive oxidation was observed depending on temperature and CO 2 /CO partial pressure ratio ( P co2 / P co ). The critical P co2 / P co value for the transition was 1O 2 times as large as a theoretical value calculated from the Wagner model. In the passive oxidation above 1873 K, SiO 2 bubbles were grown. The expansion and rupture of bubbles caused cyclic rapid mass gain and mass loss.