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Grain Boundary Defect Chemistry of Acceptor‐Doped Titanates: Space Charge Layer Width
Author(s) -
Vollman Markus,
Waser Rainer
Publication year - 1994
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1994.tb06983.x
Subject(s) - depletion region , grain boundary , acceptor , doping , space charge , dielectric spectroscopy , annealing (glass) , band bending , chemistry , schottky barrier , materials science , condensed matter physics , analytical chemistry (journal) , layer (electronics) , mineralogy , molecular physics , optoelectronics , composite material , crystallography , electrode , microstructure , electrochemistry , physics , quantum mechanics , diode , chromatography , electron
The grain boundary space charge depletion layers in acceptor‐doped SrTiO 3 and BaTiO 3 ceramics were investigated by impedance spectroscopy in the time and frequency domain. Based on the layer width and its dependence on the acceptor concentration, the temperature, and the oxygen partial pressure during annealing, a suggestion for a refined Schottky model is proposed. The local distribution of the donor‐type grain boundary states causing the depletion layer and the resulting band bending are discussed.