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Extended Defects in ZnO Ceramics Containing Bi 4 Ti 3 O 12 Additive
Author(s) -
Makovec Darko,
Trontelj Marija
Publication year - 1994
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1994.tb05393.x
Subject(s) - spinel , materials science , grain boundary , ceramic , crystallography , stacking , transmission electron microscopy , basal plane , microstructure , mineralogy , metallurgy , chemistry , nanotechnology , organic chemistry
Extended defects in ZnO ceramics containing, 6 wt% Bi 4 Ti 3 O 12 were studied by analytical electron microscopy. Apart from basal plane condensation stacking faults, which are also present in as‐received ZnO, extended defects related to the presence of Bi 4 Ti 3 O 12 were observed. In samples sintered at 900°C they lie in the basal or in the prismatic planes and they quite often form closed loops, whereas they form serpentine‐shaped boundaries in samples sintered at 1200°C. Evidence is given that they are inversion boundaries. Their TEM image characteristics, as well as the unambiguous presence of Ti at the boundaries, suggest that they are formed due to the presence of 2‐D coherent precipitates of Ti‐rich (possibly Zn 2 TiO 4 ‐type spinel) phase.