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Semiconducting Barium Titanate Ceramics Prepared by Boron‐Containing Liquid‐Phase Sintering
Author(s) -
Ho InChyuan
Publication year - 1994
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1994.tb05372.x
Subject(s) - sintering , materials science , barium titanate , ceramic , grain boundary , perovskite (structure) , temperature coefficient , grain size , boron , phase (matter) , electrical resistivity and conductivity , electroceramics , liquid phase , chemical engineering , mineralogy , composite material , microstructure , fabrication , chemistry , thermodynamics , pathology , medicine , microfabrication , electrical engineering , alternative medicine , organic chemistry , physics , engineering
Semiconducting BaTiO 3 ceramics have been prepared by adding BN as a sintering aid. Density as high as 93% of theoretical and grain size as large as 16 μm are obtained after sintering at 1160°C. Most significant is that the semiconducting BaTiO 3 is obtained at sintering temperatures as low as 1100°C. The low‐temperature‐sintered BaTiO 3 exhibits a positive temperature coefficient. (PTC) anomaly above 120°C with a resistivity maximum at a temperature as high as 400°C, which is much higher than that of the conventional BaTiO 3 . The incorporation of B into the perovskite structure is negligible. Also, the presence of B at a grain boundary after sintering is believed to enhance the PTC effect.