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Effects of La 2 O 3 /ZnO Additives on Microstructure And Microwave Dielectric Properties of Zr 0.8 Sn 0.2 TiO 4 Ceramics
Author(s) -
Kudesia Rajiv,
McHale Anna E.,
Snyder Robert L.
Publication year - 1994
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1994.tb04572.x
Subject(s) - microstructure , materials science , dielectric , sintering , temperature coefficient , ceramic , doping , grain growth , grain size , analytical chemistry (journal) , mineralogy , composite material , chemistry , optoelectronics , organic chemistry
Dielectric ceramics of Zr 0.8 Sn 0.2 TiO 4 containing La 2 O 3 and ZnO as sintering aids were prepared and investigated for microstructure and microwave dielectric properties. Low‐level doping with La 2 O 3 and ZnO (up to 0.30 wt%) is good for densification and dielectric properties. These additives do not affect the dielectric constant and the temperature coefficient. Dielectric losses increase significantly at additive levels higher than 0.15 wt%. The combined additives La 2 O 3 and ZnO act as grain growth enhancers. With 0.15 wt% additives, a ceramic having a dielectric constant, a quality factor, and a temperature coefficient of frequency at 4.2 GHz of 37.6, 12 800, and –2.9 ppm/°C, respectively, was obtained. The quality factor was considerably improved by prolonged sintering.