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Generation and Mobility of Electronic Charge Carriers in Y 1 Ba 2 Cu 3 Ox
Author(s) -
Yoo HanIll,
Lee SangMin
Publication year - 1994
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1994.tb04560.x
Subject(s) - orthorhombic crystal system , tetragonal crystal system , phase (matter) , phase boundary , materials science , charge carrier , oxygen , analytical chemistry (journal) , electron mobility , enthalpy , crystallography , chemistry , thermodynamics , crystal structure , physics , optoelectronics , organic chemistry , chromatography
The Hall effect and the conductivity of Y 1 Ba 2 Cu 3 O x have been measured together for quenched specimens at room temperature as functions of oxygen content (x) in the range of 6 < × < 7. It has been reconfirmed that a hole is generated per every oxygen atom incorporated in the orthorhombic phase (x > 6.5) and per every two oxygen atoms in the tetragonal phase (x < 6.5). The exothermic enthalpy change for hole generation is 2 times or more larger in the tetragonal than in the orthorhombic phase. The mobility of the majority carrier holes has been found to vary discontinuously crossing the phase boundary (x ⋍ 6.5), reflecting a first‐order phase transition for these quenched specimens. It is independent of oxygen content in each structure: 0.34 ± 0.03 cm 2 /(V·s) in the tetragonal phase and 0.51 ± 0.06 cm 2 /(V·s) in the orthorhombic phase.