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Control of Leakage Resistance in Pb(Zr,Ti)O 3 Thin Films by Donor Doping
Author(s) -
Dimos Dunne,
Schwartz Robert W.,
Lockwood Steven J.
Publication year - 1994
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1994.tb04536.x
Subject(s) - materials science , doping , leakage (economics) , dopant , activation energy , thin film , acceptor , composite material , analytical chemistry (journal) , optoelectronics , nanotechnology , condensed matter physics , chemistry , physics , chromatography , economics , macroeconomics
Donor doping, with La and Nb, has been used successfully to improve the leakage resistance of Pb(Zr,Ti)O 3 (PZT) films. Donor doping of Pb(Zr 0.5 Ti 0.5 )O 3 films has led to an improvement in the leakage resistance of over 2 1/2 orders of magnitude at elevated temperatures (T 100°C). The effect on leakage resistance is the same for the A‐site (La) and B‐site (Nb) dopants. However, the improvement is only about 1 order of magnitude near room temperature. This temperature effect is due to an increase in the transition temperature from a low activation energy mechanism to a higher activation energy mechanism. Similar improvements in leakage resistance have also been obtained by increasing the Pb concentration in the starting solution, which implies that Pb vacancies are the dominant acceptor species in the undoped films. In addition, donor doping has been effective in improving the electrical breakdown strength at elevated temperatures. Consequently, donor‐doped PZT films have been shown to be superior to undoped films for applications requiring high leakage resistance, such as decoupling capacitors.