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High‐Temperature Oxidation of Chemically Vapor‐Deposited Silicon Nitride in a Carbon Monoxide‐Carbon Dioxide Atmosphere
Author(s) -
Narushima Takayuki,
Goto Takashi,
Hagiwara Jun,
Iguchi Yasutaka,
Hirai Toshio
Publication year - 1994
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1994.tb04525.x
Subject(s) - carbon monoxide , silicon nitride , carbon dioxide , analytical chemistry (journal) , chemistry , thermogravimetric analysis , chemical vapor deposition , water vapor , nitride , atmosphere (unit) , silicon , inorganic chemistry , materials science , catalysis , environmental chemistry , organic chemistry , layer (electronics) , physics , thermodynamics
Oxidation behavior of chemically vapor‐deposited silicon nitride (CVD‐Si 3 N 4 ) in CO─CO 2 atmospheres between 1823 and 1923 K was investigated using a thermogravimetric technique. Mass loss of Si 3 N 4 (active oxidation) was observed in a region of P CO2 /P CO < 1, while mass gain (passive oxidation) was observed at around P CO2 P CO = 10. In the active oxidation region below P CO2 P CO = 10 –4 , carbon particles were formed on the Si 3 N 4 surface as an oxidation product, and the mass‐loss rates were independent of P CO2 / P CO In the active oxidation region above P CO2 / P CO = 10 –4 the mass‐loss rates decreased with increasing P CO2 / P co. The critical P CO2 / P CO value from the active to passive oxidation was 2 orders of magnitude larger than the calculated value predicted from the Wagner model.