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Microchemical Analysis of the SCS‐6 Silicon Carbide Fiber
Author(s) -
Ning XianJie,
Pirouz Pirouz,
Farmer Serene C.
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb08329.x
Subject(s) - auger electron spectroscopy , transmission electron microscopy , scanning electron microscope , materials science , energy filtered transmission electron microscopy , silicon carbide , silicon , electron energy loss spectroscopy , fiber , scanning transmission electron microscopy , analytical chemistry (journal) , polymer characterization , etching (microfabrication) , isotropic etching , x ray photoelectron spectroscopy , energy dispersive x ray spectroscopy , electron spectroscopy , spectroscopy , layer (electronics) , chemical engineering , nanotechnology , composite material , optoelectronics , chemistry , physics , chromatography , quantum mechanics , nuclear physics , engineering
A detailed quantitative study of the microstructural variation of chemical composition of chemically vapor‐deposited commercial SiC SCS‐6 fiber is presented. Chemical etching and various electron‐optical techniques including scanning electron microscopy, transmission electron microscopy, transmission electron microscopy, scanning Auget microscopy, Auger electron spectroscopy, and parallel electron energy loss spectroscopy are used to analyze the chemical composition of the as‐received fiber. In addition, some results on stereology of the high‐temperature annealed fiber are presented. The results show that the carbon‐to silicon atom ratio in the SiC layers decreases in a stepwise fashion from ∼ 3:2 to ∼ 1:1 in going from the inner‐most layer to outermost layer.