Premium
Kinetics of Silicon Nitride Chemical Vapor Deposition from Silicon Tetrafluoride and Ammonia
Author(s) -
Larson Richard S.
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb08314.x
Subject(s) - chemical vapor deposition , crystallinity , deposition (geology) , silicon nitride , diffusion , decomposition , reaction rate constant , silicon , allowance (engineering) , materials science , chemistry , analytical chemistry (journal) , thermodynamics , kinetics , nanotechnology , composite material , organic chemistry , mechanical engineering , paleontology , physics , quantum mechanics , sediment , engineering , biology
Rate laws for the chemical vapor deposition of Si 3 N 4 from SiF 4 and NH 3 are obtained by fitting the results of pareametric reactor experiments with a one‐dimensional steady‐state model for the reactor. The model includes axial mass transport by both convection and multicomponent diffusion, and allowance is made for the use of an expressions with adjustable constants are used to account for deposition on both crystalline and amorphous surfaces, as well as the heterogeneous decomposition of NH 3 . In addition, there are mechanisms that determine the actual degree of surface crystallinity at any location. Optimum values for the rate constants are found by searching for the best overall fit to the experimental deposition rate and crystallinity data. It is shown that the model, with simple second‐order expressions for the deposition rates, is quite successful in reproducing the experimentally observed effects of temperature, flow rate, reactant mole ratio, and axial position.