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High‐Resolution Electron Microscopy of Silicon Carbide‐Whisker‐Reinforced Alumina Composite Interfaces in Specimens Subjected to Elevated Temperatures
Author(s) -
Wereszczak Andrew A.,
ParviziMajidi Azar,
More Karren L.,
Ferber Mattison K.
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb07787.x
Subject(s) - whisker , materials science , silicon carbide , composite material , scanning electron microscope , composite number , carbide , fracture toughness , silicon , whiskers , electron microscope , optical microscope , metallurgy , optics , physics
Interfaces of silicon carbide‐whisker‐reinforced alumina (SiC( w )/Al 2 O 3 ) composites were examined using high‐resolution electron microscopy (HREM). HREM specimens were prepared from the bulk of samples that were previously tested for fracture toughness at 25°, 1000°, 1200°, or 1400°C, in ambient air. The test temperature history served as an independent variable. It was found that the as‐received material did not possess a distinct interfacial layer and that the test temperature history (which included a 30°C/min heating and cooling rate, a 30‐min soak prior to specimen loading, and a typical test duration of 5–10 min) did not appreciably change the interface thickness at any of the elevated test temperatures.