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Influence of Potassium on Preparation and Performance of PTC Resistors
Author(s) -
Ho InChyuan,
Hsieh HueyLin
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb07784.x
Subject(s) - dopant , resistor , temperature coefficient , materials science , electrical resistivity and conductivity , grain boundary , potassium , acceptor , ceramic , raw material , grain size , grain growth , doping , mineralogy , analytical chemistry (journal) , composite material , chemical engineering , microstructure , metallurgy , chemistry , optoelectronics , electrical engineering , condensed matter physics , chromatography , physics , engineering , organic chemistry , voltage
Different amounts of K 2 CO 3 were added to (Ba,Sr)TiO 3 ‐based PTCR (positive temperature coefficient of resistance) ceramics to investigate their influence on the microstructural and electrical properties. Experimental results showed that the incorporation of K acted as an A‐site acceptor‐type dopant. In addition to enhancing discontinuous grain growth, the increase of K 2 CO 3 was found to raise the room‐temperature resistivity which was dominated by grain‐boundary resistance rather than grain resistance. By adjusting to a suitable amount of donor dopant, the inherent contamination of K in raw material can be compensated to achieve a high‐quality PTC resistor.