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Electrical Conduction in Aluminum Nitride
Author(s) -
Jang SeAug,
Choi Gyeong Man
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb05319.x
Subject(s) - nitride , thermal conduction , electrical resistivity and conductivity , doping , impurity , materials science , aluminium , ion , conductivity , grain size , electrical impedance , electrical conduction , analytical chemistry (journal) , mineralogy , chemistry , composite material , optoelectronics , electrical engineering , layer (electronics) , engineering , organic chemistry , chromatography
Electrical conductivities of aluminum nitride (AIN) doped with various ions of different sizes and valences have been measured at elevated temperatures. Grain conductivities of samples doped with large cations, obtained from complex impedance patterns, were much higher than those doped with small cations. The temperature dependence of electrical conductivity showed two regions having different activation energies. It was proposed that the precipitated impurities play a decisive role in the electrical conduction of AIN.