Premium
High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in CO─CO 2 Atmosphere
Author(s) -
Narushima Takayuki,
Goto Takashi,
Yokoyama Yoshio,
Iguchi Yasutaka,
Hirai Toshio
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb03975.x
Subject(s) - materials science , silicon carbide , thermogravimetric analysis , atmosphere (unit) , analytical chemistry (journal) , atmospheric temperature range , water vapor , carbide , layer (electronics) , chemical vapor deposition , partial pressure , carbon fibers , porosity , chemical engineering , chemistry , nanotechnology , metallurgy , composite material , composite number , oxygen , environmental chemistry , organic chemistry , physics , meteorology , engineering , thermodynamics
Active oxidation behavior of CVD‐SiC in CO─CO 2 atmospheres was investigated using a thermogravimetric technique in the temperature range between 1823 and 1923 K. The gas pressure ratio, P CO2 / P CO , was controlled between 10 −4 and 10 −1 at 0.1 MPa. Active oxidation rates (mass loss rates) showed maxima at a certain value of P CO2 / P CO , ( P CO2 / P CO ) * , In a P CO2 / P CO region lower than the ( P CO2 / P CO ) * a carbon layer was formed on the SiC surface. In a P CO2 / P CO region higher than the ( P CO2 / P CO ) * , silica particles or a porous silica layer was observed on the SiC surface.