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Space Charge Segregation at Grain Boundaries in Titanium Dioxide: I, Relationship between Lattice Defect Chemistry and Space Charge Potential
Author(s) -
Ikeda Jeri Ann S.,
Chiang YetMing
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb03964.x
Subject(s) - acceptor , space charge , doping , crystallographic defect , lattice (music) , chemistry , chemical physics , materials science , condensed matter physics , crystallography , physics , quantum mechanics , acoustics , electron , optoelectronics
The electrical potential difference between the interface and the bulk in TiO 2 is obtained as a function of temperature, oxygen pressure, and acceptor or donor doping from a space charge model that explicitly includes the high‐temperature lattice defect chemistry. Using defect equilibrium constants for TiO 2 from previous literature studies, it is shown that for a space charge determined by ionic defect equilibration with the interface, the potential is negative in undoped and acceptor‐doped TiO 2 and positive at high donor concentrations. The isoelectric point lies in the donor‐doped regime at high temperatures due to the contribution of defects from reduction, even for fairly oxidizing ambients.