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Oxidation of Silicon, Silicon Carbide, and Silicon Nitride in Gases Containing Oxygen and Chlorine
Author(s) -
Hsu PeiPei,
Ip Sikyin,
Park Chan,
McNallan Michael J.
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb03952.x
Subject(s) - silicon , silicon oxynitride , chlorine , silicon carbide , materials science , silicon nitride , layer (electronics) , locos , corrosion , oxygen , oxide , chemical engineering , inorganic chemistry , nanocrystalline silicon , metallurgy , chemistry , nanotechnology , crystalline silicon , organic chemistry , engineering , amorphous silicon
Chlorine contamination accelerates the oxidation of silicon‐based ceramics through the formation of volatile silicon chloride or silicon oxychloride species which degrade the protective character of the SiO 2 film. Accelerated attack may occur by active corrosion or formation of bubbles in the oxide layer. Si 3 N 4 is much more resistant to this attack than either silicon or SiC. This resistance may be related to the presence of a thin silicon oxynitride layer below the SiO 2 scale which forms on Si 3 N 4 .