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Effect of Stoichiometry on the Dielectric Properties and Life Performance of (Pb 0.875 Ba 0.125 ) [(Mg 1/3 Nb 2/3 ) 0.5 (Zn 1/3 Nb 2/3 ) 0.3 Ti 0.2 ]O 3 Relaxor Dielectric Ceramic: Part I, Dielectric Properties
Author(s) -
Kanai Hideyuki,
Furukawa Osamu,
Nakamura Shinichi,
Yamashita Yohachi
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb03806.x
Subject(s) - stoichiometry , dielectric , pyrochlore , analytical chemistry (journal) , grain boundary , electrical resistivity and conductivity , materials science , perovskite (structure) , phase (matter) , phase boundary , microstructure , mineralogy , crystallography , chemistry , metallurgy , physics , optoelectronics , organic chemistry , chromatography , quantum mechanics
Effects of stoichiometry (A/B mole ratio, i.e., the ratio of elements on the A‐site to those on the B‐site in the perovskite structure) on the dielectric properties and microstructure of a partially A‐site substituted relaxor, (Pb 0.875 Ba 0.125 ) A [(Mg 1/3 Nb 2/3 ) 0.5 (Zn 1/3 Nb 2/3 ) 0.3 Ti 0.2 ] B O 3 were investigated in the A/B range between 0.95 and 1.05. Specimens, with A/B equal to or greater than 1.01, were sintered at lower temperatures than those with A/B equal to or less than 1.00. A maximum dielectric constant (K max ) value of 13300 was obtained when A/B was 1.01. When A/B was less than 1.01, K max decreased, due to the formation of pyrochlore phase. K max also decreased with A/B values greater than 1.01, probably due to a grain boundary phase. Resistivity measurements did not suggest a stoichiometry dependence. However, breakdown voltage decreased with an increase in A/B, possibly due to the segregation of PbO with low dielectric constant at grain boundaries.