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Chemistry and Structure of Beta Silicon Carbide Implanted with High‐Dose Aluminum
Author(s) -
Du Honghua,
Yang Zunde,
Libera Matthew,
Jacobson Dale C.,
Wang Yu C.,
Davis Robert F.
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb03787.x
Subject(s) - auger electron spectroscopy , x ray photoelectron spectroscopy , silicon carbide , rutherford backscattering spectrometry , transmission electron microscopy , carbide , aluminium , ion implantation , analytical chemistry (journal) , electron spectroscopy , chemistry , materials science , single crystal , crystallography , ion , metallurgy , nanotechnology , nuclear magnetic resonance , physics , organic chemistry , chromatography , nuclear physics
Single‐crystal β‐SiC was implanted with aluminum to 3.90 × 10 17 ions/cm 2 at 168 keV at 773 K. The resultant compositional and structural characteristics were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, X‐ray photoelectron spectroscopy, and cross‐sectional transmission electron microscopy. No aluminum redistribution was observed during implantation. The Si‐to‐C ratio exhibited a negative deviation from unity in the implanted region. The shift in the photoelectron binding energies indicated the formation of aluminum carbide. The studies by electron microscopy showed that the implanted region consists of slightly misoriented β‐SiC crystals and textured crystalline aluminum carbide precipitates