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Active Gaseous Corrosion of Porous Silicon Carbide
Author(s) -
Sickafoose Robert R.,
Readey Dennis W.
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb03785.x
Subject(s) - impurity , silicon carbide , corrosion , atmosphere (unit) , materials science , porosity , oxygen , reducing atmosphere , porous medium , carbide , chemical engineering , metallurgy , inorganic chemistry , composite material , chemistry , organic chemistry , thermodynamics , physics , engineering
In a reducing atmosphere, SiO 2 as an impurity in SiC can react to form SiO and CO gases. Likewise, oxygen in the atmosphere can also lead to the same gaseous species. Experimental data are reported on the rate of weight loss in H 2 ‐H 2 O atmospheres of porous SiC containing residual SiO 2 . The amount of residual SiO 2 was varied by passive oxidation of the porous SiC prior to heating in the reducing atmosphere. The data are compared to a model of active corrosion to determine the mechanism of weight loss and to identify the gas species present in SiC with SiO 2 as an impurity.