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Atomic Beam Modifications of Insulator Surfaces
Author(s) -
EipersSmith Ketti,
Waters Kelley,
Schultz J. Albert
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb03781.x
Subject(s) - ion beam , thin film , dissociation (chemistry) , ion beam deposition , atomic physics , funnel , sticking probability , beam (structure) , ion , stoichiometry , materials science , ion plating , chemistry , analytical chemistry (journal) , nanotechnology , optics , physics , organic chemistry , chromatography , adsorption , desorption
A deposition chamber is described comprising a unique broad‐beam, high‐flux (>2 mA/cm 2 ), low‐energy (<100 eV) molecular and atomic nitrogen source suitable for growth and/or surface modification of ceramic thin films. Atom flux is generated by collisionally neutralizing and dissociating a diatomic nitrogen ion beam impinging a specially shaped surface interposed between the ion source and the substrate to be modified. The dissociation surface functions as a „funnel” to give the resulting neutral beam a tight geometric focus. In addition, our chamber possesses the unique capability of surface analysis at high pressures (mTorr) during thin‐film formation through the use of pulsed time‐of‐flight ion scattering techniques. This allows continuous monitoring (and control) of film stoichiometry during growth.