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Ion‐Beam‐Induced Densification of Zirconia Sol–Gel Thin Films
Author(s) -
Levine Timothy E.,
Keddie Joseph L.,
Revesz Peter,
Mayer James W.,
Giannelis Emmanuel P.
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb03769.x
Subject(s) - rutherford backscattering spectrometry , materials science , elastic recoil detection , cubic zirconia , ion , analytical chemistry (journal) , ion beam , hydrogen , sol gel , sintering , carbon fibers , ion implantation , thin film , ceramic , composite material , chemistry , nanotechnology , organic chemistry , chromatography , composite number
Densification of sol–gel zirconia films was achieved using ion implantation instead of conventional heat treatment. Densification was observed with Xe + ‐ion doses as low as 10 14 ions/cm 2 . Ion implantation resulted in hydrogen and carbon losses as measured by forward recoil elastic spectrometry (FRES) and Rutherford backscattering spectrometry (RBS) using 12 C(α,α) 12 C resonance, respectively. The density and chemical composition of the highest‐dose implanted sol–gel films were comparable with those obtained by high‐temperature sintering. The chemical and microstructural modifications in the films were attributed to both electronic interactions and nuclear collisions between the Xe + ions and the target atoms.