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Elevated‐Temperature Behavior of High‐Strength Silicon Carbide
Author(s) -
Woodilla David,
Buonomo Michael,
BarOn Isa,
Katz R. Nathan,
Whalen Thomas
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb03719.x
Subject(s) - materials science , silicon carbide , composite material , indentation , fracture toughness , flexural strength , enhanced data rates for gsm evolution , silicon , carbide , bending , toughness , stress (linguistics) , metallurgy , telecommunications , computer science , linguistics , philosophy
The room‐ and high‐temperature mechanical properties or a high‐strength, sintered silicon carbide were evaluated Room‐temperature strength was measured in four‐point bending. The room‐temperature fracture toughness was determined using a precracked single‐edge‐notched beam (SENB) bridge indentation technique. The high‐temperature behavior was evaluated using the stepped‐temperature stress rupture (STSR) procedure. Both the room‐ and the high‐temperature behavior are superior to those of previously tested commercial sintered α and β silicon carbides.