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Kinetics of β‐Si 3 N 4 Grain Growth in Si 3 N 4 Ceramics Sintered under High Nitrogen Pressure
Author(s) -
Lai KouRueh,
Tien TsengYing
Publication year - 1993
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1993.tb03693.x
Subject(s) - grain growth , materials science , sintering , isothermal process , silicon nitride , nitrogen , grain size , anisotropy , ceramic , nitride , analytical chemistry (journal) , kinetics , mineralogy , crystallography , silicon , metallurgy , thermodynamics , composite material , chemistry , physics , organic chemistry , layer (electronics) , quantum mechanics , chromatography
The kinetics of anisotropic β‐Si 3 N 4 grain growth in silicon nitride ceramics were studied. Specimens were sintered at temperatures ranging from 1600° to 1900°C under 10 atm of nitrogen pressure for various lengths of time. The results demonstrate that the grain growth behavior of β‐Si 3 N 4 grains follows the empirical growth law D n – D 0 n = kt , with the exponents equaling 3 and 5 for length [001] and width [210] directions, respectively. Activation energies for grain growth were 686 kJ/mol for length and 772 kJ/mol for width. These differences in growth rate constants and exponents for length and width directions are responsible for the anisotropy of β‐Si 3 N 4 growth during isothermal grain growth. The resultant aspect ratio of these elongated grains increases with sintering temperature and time.