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Thermodynamic Calculations on the Chemical Vapor Deposition of Silicon Nitride and Silicon from Silane and Chlorinated Silanes
Author(s) -
Kruis Frank Einar,
Scarlett Brian,
Bauer Robert A.,
Schoonman Joop
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb07851.x
Subject(s) - silanes , silane , silicon , chemical vapor deposition , silicon nitride , dichlorosilane , deposition (geology) , materials science , inorganic chemistry , nitrogen , nitride , hydrogen , phase (matter) , chemistry , chemical engineering , organic chemistry , nanotechnology , layer (electronics) , paleontology , sediment , engineering , biology
After a discussion of the thermochemical values of the Si–H–Cl–N system which occur in the literature, CVD phase diagrams are presented which include contours of constant deposition efficiency. The temperature range considered is from 800 to 2600 K. A number of chlorinated silanes as well as silane can be used as a silicon source, while ammonia is used as the nitrogen source. The effects of pressure variation and dilution by nitrogen and hydrogen are also included. Some initial calculations concerning silicon diimide are made. The CVD phase diagrams are used to describe several mechanisms occurring during the formation of silicon nitride from the gas phase.