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Determination of Inversion Temperature of Sb 2 O 3 ‐Doped BaTiO 3 Positive Temperature Coefficient of Resistivity (PTCR) Ceramics by the Finite Difference Method
Author(s) -
Kim HongSoo,
Sung Gun Yong,
Kim Chong Hee
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb07847.x
Subject(s) - electrical resistivity and conductivity , temperature coefficient , materials science , curie temperature , grain boundary , resistive touchscreen , doping , ceramic , analytical chemistry (journal) , mineralogy , condensed matter physics , composite material , chemistry , microstructure , electrical engineering , optoelectronics , physics , chromatography , ferromagnetism , engineering
The effect of the cooling rate on the PTCR (positive temperature coefficient of resistivity) characteristics of 0.1 mol% Sb 2 O 3 ‐doped BaTiO 3 ceramics has been investigated. Resistances both below and above the Curie temperature were increased by slow cooling, which indicated that the resistive layer width at the grain boundary increased as the cooling rate decreased. Concentration profiles of the Ba vacancies as a function of distance from the grain boundary have been simulated by the finite difference method. The inversion temperature of the 0.1 mol% Sb 2 O 3 ‐doped BaTiO 3 system was determined to be 1160°C from the measured electrical properties and computed concentration profiles.