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High‐Resolution Electron Microscopy of the Silicon Carbide/Aluminum Carbide Interface
Author(s) -
Yano Toyohiko,
Kato Satoshi,
Iseki Takayoshi
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb07846.x
Subject(s) - materials science , silicon carbide , crystallography , stacking , carbide , crystallite , brazing , electron microscope , stacking fault , dislocation , silicon , phase (matter) , composite material , metallurgy , chemistry , optics , alloy , physics , organic chemistry
The interface of single‐crystal SiC and Al brazed at 1273 K is investigated by high‐resolution electron microscopy. The orientation relationship of SiC to the Al 4 C 3 reaction layer that forms between the SiC and the Al can be expressed as (0001) SiC ∥(0001) Al4C3 and [11∼00] SiC ∥[11∼00] Al4C3 . Furthermore, a very thin (two tetrahedral layers thick) transition phase and misfit dislocations are observed between the SiC and Al 4 C 3 lattices. The structure of the transition phase is discussed based on the high‐resolution electron microscopy, the stacking of the (Al,Si)C 4 tetrahedral layers, and the charge balance. The same reaction product, with the same orientation relationship, is observed at the interface of a polycrystalline SiC and Al brazed joint.