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Plasma‐Enhanced Chemical Vapor Deposition of Boron Nitride Using Polymeric Cyanoborane as Source
Author(s) -
Maya Leon
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb07229.x
Subject(s) - plasma enhanced chemical vapor deposition , boron nitride , chemical vapor deposition , boron , materials science , substrate (aquarium) , chemical engineering , deposition (geology) , hexagonal boron nitride , nitride , impurity , inorganic chemistry , nanotechnology , chemistry , layer (electronics) , graphene , organic chemistry , paleontology , oceanography , sediment , geology , engineering , biology
The plasma‐enhanced chemical vapor deposition (PECVD) of boron nitride films was studied using polymeric cyanoborane, (CNBH 2 ) n , a material previously examined by thermally activated CVD. The PECVD procedure yields boron nitride coatings containing ≅20 wt% paracyanogen as a contaminant. This impurity can be removed by heat treatment under vacuum or in an ammonia atmosphere. The boron nitride coatings are hexagonal and appear to be boron deficient. The PECVD process takes place at 300°C, measured at the backside of the substrate, as compared with 600°C in the thermally activated CVD process.