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Analysis of Residual Stress in 6H‐SiC Particles within Al 2 O 3 /SiC Composites through Raman Spectroscopy
Author(s) -
DiGregorio John F.,
Furtak Thomas E.
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb07207.x
Subject(s) - materials science , raman spectroscopy , composite material , residual stress , micromechanics , stress (linguistics) , hydrostatic pressure , diamond , hydrostatic equilibrium , volume fraction , composite number , optics , linguistics , philosophy , physics , quantum mechanics , thermodynamics
We measured the Raman spectrum associated with the E 2 ‐TO quasi and LO quasi modes of 6H‐SiC particles as a function of hydrostatic pressure using a diamond anvil cell. The results of this calibration experiment were used to analyze the residual stress in 6H‐SiC particles within Al 2 O 3 /SiC composites with 12%, 20%, and 30% SiC by volume. The Raman spectra show that residual stress in the SiC near the surface of the composites is −2040 ± 120, −1841 ± 110, and −1615 ± 100 MPa for the 12%, 20%, and 30% SiC composites, respectively. The measured decrease in stress with increasing packing fraction is consistent with theoretical predictions based on micromechanics.