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Calculation of Ultraslow Dielectric Relaxation of Doped BaTiO 3 Ceramics
Author(s) -
Sun Hongtao,
Zhang Liangying,
Yao Xi
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb05588.x
Subject(s) - dielectric , capacitor , grain boundary , materials science , relaxation (psychology) , doping , ceramic , polarization (electrochemistry) , condensed matter physics , ceramic capacitor , ferroelectricity , voltage , mineralogy , composite material , optoelectronics , chemistry , microstructure , electrical engineering , physics , engineering , psychology , social psychology
Using a linear voltage ramp method, ultraslow dielectric relaxation processes of La‐doped BaTiO 3 boundary layer (BL) capacitors are measured at room temperature. For the electric polarization model of a double‐layer dielectric, a procedure to calculate the electrical parameters of grain and grain boundary has been developed. Calculated results suggest that there is a shell on the surface of the grain. TEM images of the BL capacitor also show a lot of microregions with minor structural modifications. Relaxation times are estimated from the equivalent circuit and are in agreement with fitted results.