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Near‐Stoichiometric Silicon Carbide from an Economical Polysilane Precursor
Author(s) -
Seyferth Dietmar,
Wood Timothy G.,
Tracy Henry J.,
Robison Jennifer L.
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb05578.x
Subject(s) - polysilane , stoichiometry , pyrolysis , catalysis , silicon carbide , carbide , silicon , materials science , metal , condensation , inorganic chemistry , chemistry , metallurgy , organic chemistry , polymer , physics , thermodynamics
Na condensation of CH 3 SiHCl 2 gives polysilanes of the type ((CH 3 SiH) x (CH 3 Si) y ) n (where x + y = 1) whose pyrolysis in a stream of Ar gives SiC and a substantial amount of elemental Si. Treatment of such polysilanes with catalytic quantities of group‐IV‐metal–organometallic complexes, ((η‐C 5 H 5 ) 2 ZrH 2 ) n , (η‐C 5 H 5 ) 2 Zr(CH 3 ) 2 , (η‐C 5 H 5 ) 2 ZrHCl, and (η‐C 5 H 5 ) 2 ‐Ti(CH 3 ) 2 , results in cross‐linking processes such that pyrolysis of these polysilanes gives close to stoichiometric SiC (≥95 wt %) and only very little elemental Si.