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Damage‐Resistant SiC–AlN Layered Composites with Surface Compressive Stresses
Author(s) -
Sathyamoorthy Rengaswamy,
Virkar Anil V.,
Cutler Raymond A.
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb05550.x
Subject(s) - materials science , composite material , thermal expansion , layer (electronics) , bending , residual stress , compression (physics) , compressive strength , hot pressing , bar (unit) , flexural strength , monoclinic crystal system , pressing , physics , meteorology , chemistry , crystal structure , crystallography
Three‐layer samples in the SiC‐AlN system with outer layers richer in SiC, as well as monolithic samples of uniform composition, were fabricated by hot‐pressing. The strain gage technique, previously described, was used to estimate residual compressive stress in the outer layers developed because of the difference in coefficients of thermal expansion between inner and outer layers. Bar‐shaped samples were indented using a Vickers indenter under loads as high as 20 kg (196 N) on outer layers and were fractured in three‐point bending. Three‐layer samples with outer layers under compression exhibited increased resistance to the contact‐induced damage in comparison to the monoclinic samples.