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Depletion Effects of Silicon Carbide Deposition from Methyltrichlorosilane
Author(s) -
Besmann Theodore M.,
Sheldon Brian W.,
Moss Thomas S.,
Kaster Michael D.
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb05529.x
Subject(s) - silicon carbide , deposition (geology) , chemistry , silicon , inorganic chemistry , carbon fibers , chemical engineering , volumetric flow rate , materials science , organic chemistry , composite material , composite number , thermodynamics , paleontology , physics , sediment , engineering , biology
The deposition rate of SiC on carbon‐coated Nicalon fibers from methyltrichlorosilane in hydrogen was measured as a function of temperature, pressure, total flow rate, and simulated reactant depletion. The results, together with kinetic information on the stability of methyltrichlorosilane, led to two conclusions: (1) two different mechanisms of deposition can occur depending on whether the methyltrichlorosilane has an opportunity to dissociate into separate silicon‐ and carbon‐containing precursors, and (2) the deposition rate is strongly reduced by the generation of byproduct HCl. The data were fitted to a simple etch model to obtain a kinetic expression that accounts for the significant effect of HCl.