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Effect of Crystal Orientation on Conductivity and Electron Mobility in Single‐Crystal Alumina
Author(s) -
Will Fritz G.,
DeLorenzi Horst G.,
Janora Kevin H.
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb05506.x
Subject(s) - perpendicular , materials science , electrical resistivity and conductivity , thermal conduction , conductivity , crystal (programming language) , condensed matter physics , electron , thermal conductivity , orientation (vector space) , single crystal , conduction band , crystallography , chemistry , composite material , geometry , physics , mathematics , quantum mechanics , computer science , programming language
The electrical conductivity of high‐purity, single‐crystal alumina is determined parallel to and perpendicular to the c ‐axis. The mean conductivity of four samples of each orientation is a factor 3.3 higher parallel to the c ‐axis than perpendicular to it. The conductivity as a function of temperature is attributed to extrinsic electron conduction at temperatures from 400° to 900°C and intrinsic semiconduction at temperatures from 900° to 1300°C. In the high‐temperature regime, the slope on all eight specimens is 4.7 ± 0.1 eV. Hence, the thermal bandgap at 0 K is 9.4 ± 0.2 eV.