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Influence of Oxygen on the Formation of Aluminum Silicon Carbide
Author(s) -
Oscroft Robert J.,
Thompson Derek P.
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb05472.x
Subject(s) - aluminosilicate , silicon carbide , impurity , materials science , oxygen , carbide , aluminium , silicon , hot pressing , phase (matter) , liquid phase , electron diffraction , diffraction , chemical engineering , mineralogy , metallurgy , chemistry , catalysis , thermodynamics , organic chemistry , physics , optics , engineering
X‐ray diffraction studies have been used to follow the formation of Al 4 SiC 4 from Al 4 C 3 and SiC and the role played by impurity oxygen. The phase Al 2 OC forms in the early stages of reaction and reacts with SiC at ≈ 1700°C to produce Al 4 SiC 4 plus a small amount of an aluminosilicate liquid. This liquid dissociates at higher temperatures, the resulting evolution of gases hindering complete densification. Higher densities are obtained on hot‐pressing.